| PART |
Description |
Maker |
| HYM72V1610GS-60 |
16M x 72 Bit ECC FPM DRAM Module buff...
|
Infineon
|
| HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 H |
4M x 4 Bit FPM DRAM 5 V 4k 60ns
4M x 4 Bit FPM DRAM 5 V 4k 50ns
-4M x 4-Bit Dynamic RAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| VG2618160CJ-5 |
DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MT4LC1M16C3DJ-6 MT4LC1M16C3DJ-6S MT4LC1M16C3TG-6 M |
FPM DRAM
|
MICRON[Micron Technology]
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
